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Gate driver for GaN transistor – Challenge and Opportunity报告文档

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【背景】

It’s generally agreed that GaN transistor has the capability of fast switching and low switching loss, while the lack of availability of efficient driver limits the utilization of GaN application. GaN transistors generally behave like power MOSFETs, but at much higher switching speeds and power densities [1]. To better understanding of the similarities and differences is fundamental understanding by how much existing power conversion systems can be improved by using GaN-based device technologies. The nowadays challenge is pushing ahead with the switching frequency to 100MHz in low power application and several MHz in high power application.

【文档内容】

页数:7

内容简介:

This paper addresses the challenges of utilizing high speed GaN transistors, including the general challenges and technical challenges. This paper also introduce the state-of-the-art of GaN gate driver design and bring out the possible approach of achieving the high efficiency power converter.

目录:

1. Challenges and needs of developing novel gate driver for GaN transistor

1. General challenges

2. Technical challenges in GaN gate driver design

2. The state-of-the-art of Gate driver design for the GaN transistors

3. Our approach

Reference:

[1] “Wiley: GaN Transistors for Efficient Power Conversion, 2nd Edition - Alex Lidow, Johan Strydom, Michael de Rooij, et al.” [Online]. Available: http://eu.wiley.com/WileyCDA/WileyTitle/productCd-1118844769.html. [Accessed: 05-Apr-2016].

[2] Transphorm, “TPH3006PD – GaN Power Low-loss Switch,” Transform datasheet, 27 March 2013.

[3] http://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2010_datasheet.pdf.

[4] Efficient Power Conversion Corporation, “EPC2001 – Enhancement-mode Power Transistor,” EPC2001 datasheet, March 2011 [Revised Jan. 2013].Available from http://epc-co.com/epc/documents/datasheets/EPC2001_datasheet.pdf .

[5] T. Ishibashi, M. Okamoto, E. Hiraki, T. Tanaka, T. Hashizume, and T. Kachi, “Resonant gate driver for normally-on GaN high-electron-mobility transistor,” in 2013 IEEE ECCE Asia Downunder (ECCE Asia), 2013, pp. 365–371.

[6] S. Mönch, M. Costa, A. Barner, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, and O. Ambacher, “Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs,” in 2015 IEEE 27th International Symposium on Power Semiconductor Devices IC’s (ISPSD), 2015, pp. 373–376.

[7] “Ground Bounce Basics and Best Practices - Ground_Bounce.pdf.” [Online]. Available: http://www.keysight.com/upload/cmc_upload/All/Ground_Bounce.pdf?&cc=CH&lc=ger. [Accessed: 11-Apr-2016].

[8] “AN-640 Understanding and Minimizing Ground Bounce - AN-640.pdf.” [Online]. Available: https://www.fairchildsemi.com/application-notes/AN/AN-640.pdf . [Accessed: 11-Apr-2016].

[9] Z. Chen, Y. T. Wong, T. S. Yim, and W. H. Ki, “A 12A 50V half-bridge gate driver for enhancement-mode GaN HEMTs with digital dead-time correction,” in 2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, pp. 1750–1753.

[10] Y. Wen, M. Rose, R. Fernandes, R. van Otten, H. Bergveld, and O. Trescases, “A Dual-Mode Driver IC with Monolithic Negative Gate Voltage Capability and Digital Current-Mode Controller for Depletion-Mode GaN HEMT,” IEEE Transactions on Power Electronics, vol. PP, no. 99, pp. 1–1, 2016.

[11] Dragan Maksimovic, “Monolithic High Frequency GaN Switched-mode Power Converters”, IEEE PELS Chapter meeting, UC Berkeley, February 1, 2016 http://power.eecs.berkeley.edu/pels/seminars/GaNswitchers_DMaksimovic_UCB_Feb2016 .

【可以学到】

You can learn how to design a driver for high speed transistor and how to analyze the drawbacks of driver designYou can easily know how to determine whether a driver is good or not.

【主要图表







版权说明

模板为本人的原创作品,购买此模型的人请勿将此模型上传到网络


发表评论

全部评论  5
      • 明华通吃大功率小功率啊,厉害
    • 1970-01-01 08:00:00
      • 挺好的!
    • 1970-01-01 08:00:00
      • 不错,非常受用,NE这个平台确实方便了大家之间的交流合作,真的是站在巨人肩上了,5分好评
    • 1970-01-01 08:00:00
      • Very interesting report. Now I get more familiar with the common driver technology for GaN transistors.
    • 1970-01-01 08:00:00
      • 靠谱,赞!
    • 1970-01-01 08:00:00

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